Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films.

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  • Ishihara Ryoichi
    Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. box 5053, 2600 GB Delft, The Netherlands
  • Wilt Paul Ch. van der
    Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. box 5053, 2600 GB Delft, The Netherlands

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  • Location Control of Crystal Si Grain Fo

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We propose a new method to control the position of a crystal silicon grain following excimer-laser melting of a thin silicon (Si) film. The thickness of the thermal isolation layer underlying the Si film was locally decreased in order to make the temperature of molten-Si at a predetermined point lowest so as to initiate the nucleation preferentially from the position. A crystal silicon grain with a diameter of 1.2 µ m was located exactly at the predetermined position.

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