The Analysis of the Defective Cells Induced by COP in a 0.3-micron-technology Node DRAM.

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  • Muranaka Masaya
    Hitachi ULSI Engineering Corp., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Makabe Kazuya
    Hitachi ULSI Engineering Corp., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Miura Masashi
    Hitachi ULSI Engineering Corp., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Kato Hideaki
    Hitachi ULSI Engineering Corp., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Ide Seihachi
    Hitachi ULSI Engineering Corp., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Iwai Hidetoshi
    Device Development Center, Hitachi Ltd., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Kawamura Masao
    Device Development Center, Hitachi Ltd., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Tadaki Yoshitaka
    Device Development Center, Hitachi Ltd., 2326 Imai, Oume–shi, Tokyo 198, Japan
  • Ishihara Masamichi
    Semoconductor & Integrated Circuits Div., Hitachi Ltd., 20–1, Josuihon–cho 5chome, Kodaira–shi, Tokyo 187, Japan
  • Kaeriyama Toshiyuki
    Semiconductor Group, Texas Instruments Inc., located Device Development Center, Hitachi Ltd., 2326 Imai, Oume–shi, Tokyo 198, Japan

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タイトル別名
  • Analysis of the Defective Cells Induced

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The influence of a crystal originated pit (COP) on the deep sub-micron dynamic-random-access-memory (DRAM), was clarified by the investigation of the defective memory cells using 0.3 microns process test-element-group (TEG) which can operate as an actual DRAM. COP constrains the growth of field oxide film and leads to degradation of the isolation characteristics between the adjacent memory cells.

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