Schottky Characteristics of InAlAs Grown by Metal-Organic Chemical Vapor Deposition.

DOI Web Site Web Site Web Site 参考文献16件
  • Ohshima Tomoyuki
    Semiconductor Technology Laboratory, Oki Electric Industry, 550–5 Higashiasakawa, Hachioji, Tokyo 193–8550, Japan
  • Moriguchi Hironobu
    Semiconductor Technology Laboratory, Oki Electric Industry, 550–5 Higashiasakawa, Hachioji, Tokyo 193–8550, Japan
  • Shigemasa Ryoji
    Semiconductor Technology Laboratory, Oki Electric Industry, 550–5 Higashiasakawa, Hachioji, Tokyo 193–8550, Japan
  • Goto Shu
    Semiconductor Technology Laboratory, Oki Electric Industry, 550–5 Higashiasakawa, Hachioji, Tokyo 193–8550, Japan
  • Tsunotani Masanori
    Semiconductor Technology Laboratory, Oki Electric Industry, 550–5 Higashiasakawa, Hachioji, Tokyo 193–8550, Japan
  • Kimura Tamotsu
    Semiconductor Technology Laboratory, Oki Electric Industry, 550–5 Higashiasakawa, Hachioji, Tokyo 193–8550, Japan

この論文をさがす

抄録

Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition (MOCVD) have been evaluated. InAlAs Schottky characteristics are strongly affected by MOCVD growth temperature. The reverse current of InAlAs grown at 700°C is more than one order of magnitude larger than that at 750°C. From deep-level transient spectroscopy (DLTS) measurements, electron traps with activation energies of 0.45, 0.33 and 0.15 eV have been observed in InAlAs grown at 700°C. The results of C-V, Hall and secondary ion mass spectrometry (SIMS) measurements suggest that the trap is acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs grown at 700°C is believed to be due to the conduction through the trap.

収録刊行物

参考文献 (16)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ