Investigation of EL6 Deep Level in Semi-Insulating GaAs by Means of a Temperature Dependence of Piezoelectric Photothermal Signal

DOI Web Site 被引用文献1件
  • Tada Susumu
    Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai nishi, Miyazaki 889-2192, Japan
  • Sato Shoichiro
    Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai nishi, Miyazaki 889-2192, Japan
  • Ito Atsushi
    Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai nishi, Miyazaki 889-2192, Japan
  • Fukuyama Atsuhiko
    Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai nishi, Miyazaki 889-2192, Japan
  • Ikari Tetsuo
    Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai nishi, Miyazaki 889-2192, Japan

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タイトル別名
  • Ultrasonic Electronics. Investigation of EL6 Deep Level in Semi-Insulating GaAs by Means of a Temperature Dependence of Piezoelectric Photothermal Signal.

抄録

The temperature dependence of the piezoelectric photothermal (PPT) signal intensity of semi-insulating (SI) GaAs from 160 to 297 K was measured. One peak at 205 K was observed in the temperature dependence of the PPT signal. Curve fitting to experimental results by a theoretical analysis based on the rate equations of electrons in the conduction band and a corresponding deep level was carried out. The temperature dependence of the quasi-Fermi level in the band gap of SI-GaAs was also taken into account in the present theoretical model for the first time. We then identified that the observed PPT peak was due to the nonradiative electron transitions through the deep level EL6 in GaAs. It is demonstrated that the deep level was clearly characterized in SI-GaAs by using the PPT measurement.

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