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- Ohta Akio
- Grad. School of Advanced Sciences of Matter, Hiroshima University
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- Murakami Hideki
- Grad. School of Advanced Sciences of Matter, Hiroshima University
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- Higashi Seiichiro
- Grad. School of Advanced Sciences of Matter, Hiroshima University
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- Miyazaki Seiichi
- Grad. School of Engineering, Nagoya University
抄録
We have studied the chemical bonding features and electronic states of ultrathin Hf-La oxide using high-resolution x-ray photoelectron spectroscopy (XPS). 6 nm-thick Hf-La oxides with different La/(Hf+La) content were prepared on wet-chemical cleaned p-type Si(100) and Pt layer by thermal decomposition of Hf(DPM: dipivaloymcthanato)4 and La(DPM)3 in O2 ambient at 450℃. From XPS core-line analysis, diffusion and incorporation of Si atoms from the Si substrate into the Hf-La oxide film by 800℃ annealing in O2 ambience were pronounced with increased La content over 35%. The energy band profile of the Hf-La oxide/Si system as a function of La content has been determined by a combination of oxide bandgap (Eg) values and valence band (VB) line-ups. The conduction band (CB) offset has been also estimated using the Eg of the Si substrate, measured Eg, and VB offset. The impact of Si incorporation into Hf-La oxide on CB and VB offsets between the Hf-La(:Si) oxide and Si substrate also discussed in comparison to the energy band diagram of the Hf-La oxide/Pt structure.
収録刊行物
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- Transactions of the Materials Research Society of Japan
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Transactions of the Materials Research Society of Japan 38 (3), 353-357, 2013
一般社団法人 日本MRS
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詳細情報 詳細情報について
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- CRID
- 1390282680488878080
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- NII論文ID
- 130004676443
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- COI
- 1:CAS:528:DC%2BC3sXhvVyjtLrM
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- ISSN
- 21881650
- 13823469
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可