Millimeter-Wave GaN HEMT for Power Amplifier Applications

• JOSHIN Kazukiyo

  Fujitsu Laboratories Ltd.

• MAKIYAMA Kozo

  Fujitsu Laboratories Ltd.

• OZAKI Shiro

  Fujitsu Laboratories Ltd.

• OHKI Toshihiro

  Fujitsu Laboratories Ltd.

• OKAMOTO Naoya

  Fujitsu Laboratories Ltd.

• NIIDA Yoshitaka

  Fujitsu Laboratories Ltd.

• SATO Masaru

  Fujitsu Laboratories Ltd.

• MASUDA Satoshi

  Fujitsu Laboratories Ltd.

• WATANABE Keiji

  Fujitsu Laboratories Ltd.

抄録

Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency f_T of 113 GHz and maximum oscillation frequency f_max of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E97.C (10), 923-929, 2014

  一般社団法人 電子情報通信学会

キーワード

• GaN HEMT
• Millimeter-wave
• Power amplifier
• Device modeling

詳細情報

• CRID: 1390282679355333248
• NII論文ID: 130004696709
• DOI: 10.1587/transele.e97.c.923
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E97.C/10/E97.C_923/_pdf
• 本文言語コード: en
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