One-Dimensional Nanotemplate Structure of a Si(110) Substrate

• Yokoyama Yuta

  Institute of Applied Physics, University of Tsukuba, Japan

• Asaoka Hidehito

  Quantum Beam Science Directorate, Japan Atomic Energy Agency, Japan

• Sinsarp Asawin

  Department of Physics, Faculty of Science, Mahidol University, Thailand

• Sasaki Masahiro

  Institute of Applied Physics, University of Tsukuba, Japan

抄録

The process for the formation of a single-domain one-dimensional nanotemplate with a 16×2 reconstruction was investigated via scanning tunneling microscopy. Si(110) substrates with different resistivities were heated with direction-controlled direct currents. It was determined that obtaining a single-domain 16×2 reconstructed structure for a substrate with a lower resistivity even at the same annealing temperature is time consuming, which indicates that applied voltage rather than current flow plays a dominant role in single-domain formation. [DOI: 10.1380/ejssnt.2012.509]

収録刊行物

• e-Journal of Surface Science and Nanotechnology

  e-Journal of Surface Science and Nanotechnology 10 (0), 509-512, 2012

  公益社団法人 日本表面真空学会

キーワード

• Scanning Tunneling Microscopy
• Si(110)
• Electromigration

詳細情報

• CRID: 1390282680163590400
• NII論文ID: 130004933753
• DOI: 10.1380/ejssnt.2012.509
• ISSN: 13480391
• Web Site: https://www.jstage.jst.go.jp/article/ejssnt/10/0/10_509/_pdf
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可