Source of nitrogen atoms of amorphous carbon nitride films fabricated with microwave-plasma CVD processes

DOI Web Site 被引用文献2件 参考文献11件
  • Ito H.
    Department of Chemistry, Nagaoka University of Technology
  • Yamamoto A.
    Department of Chemistry, Nagaoka University of Technology
  • Suzuki T.
    Extreme Energy-Density Research Institute, Nagaoka University of Technology
  • Saitoh H.
    Department of Chemistry, Nagaoka University of Technology

抄録

A novel method was presented to analyze the contribution of CN radicals to the N source of hydrogenated amorphous carbon nitride films based on the ratio of the fluxes, s=Φa-CN/ΦCN, where Φa-CN is the flux of N atoms deposited and ΦCN is that of CN radicals. Films were formed by the microwave discharge of C6H6 vapor diluted with N2. ΦCN was evaluated from the density of CN radicals determined from the intensity analysis of the laser-induced fluorescence spectra of the CN(A2Пi-X2Σ+) transition and the flow speed by a time-resolved emission measurement. Φa-CN was evaluated from the mass of a deposited film calibrated against the atomic compositions determined from the combination of Rutherford backscattering and elastic recoil detection measurements. From the comparison of the present s values and the sticking probability of CN radicals determined in our previous study [Spectrochimica Acta PartA: Molecular and Biomolecular Spectroscopy, 86, 256-265 (2012)], CN radicals were found to be the origin of 30-50% of N atoms of films fabricated in the present reaction system.

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