Fabrication of a-CN<sub><i>x</i></sub> films by RF-plasma decomposition of BrCN

DOI Web Site 参考文献17件
  • Ito Haruhiko
    Department of Chemistry, Nagaoka University of Technology
  • Okada Kohtaro
    Department of Chemistry, Nagaoka University of Technology
  • Tsuda Teppei
    Department of Chemistry, Nagaoka University of Technology
  • Akasaka Hiroki
    Department of Chemistry, Nagaoka University of Technology Present address: Mechanical Engineering Departments, Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Saitoh Hidetoshi
    Department of Chemistry, Nagaoka University of Technology

抄録

Thin films of amorphous carbon nitrides (a-CNx) were synthesized using parallel-plate radio-frequency (RF) magnetron plasma chemical vapor deposition (CVD) system. The gas mixture of Ar and N2 with the total pressure of 0.3 Torr was excited by an RF discharge of 50 W where a trace amount of BrCN vapor was added. Films were deposited onto Si substrates set on the powered and grounded electrodes. Using an X-ray photoelectron spectroscopic analysis, the [N]/([N]+[C]) ratios of the films were in the range of 0.35-0.50; a maximum value (≈0.50) was obtained for the partial pressures of Ar and N2 of 0.1 and 0.2 Torr, respectively. A positive correlation was observed between the CN(B2Σ+−X2Σ+) optical emission intensity and the [N]/([N]+[C]) ratio, indicating that the dominant mechanism of the “recovery” of the [N]/([N]+[C]) ratio upon the addition of N2 is the increase of the gas-phase reaction to produce CN radicals; the effect of the increase of N atoms may be minor. This result may suggest an effective methodology to synthesize a-CNx films with high [N]/([N]+[C]) ratios.

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