Unintentional tungsten incorporation in diamond during hot-filament chemical vapor deposition
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- Ohmagari Shinya
- Diamond Research Group, Research Institute for Ubiquitous Energy Devices (UBIQEN), National Institute of Advanced Industrial Science and Technology (AIST)
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- Srimongkon Kridsanapan
- Diamond Research Group, Research Institute for Ubiquitous Energy Devices (UBIQEN), National Institute of Advanced Industrial Science and Technology (AIST) Department of Physics, Faculty of Science, Khon Kaen University
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- Amornkitbamrung Vittaya
- Department of Physics, Faculty of Science, Khon Kaen University
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- Yamada Hideaki
- Diamond Research Group, Research Institute for Ubiquitous Energy Devices (UBIQEN), National Institute of Advanced Industrial Science and Technology (AIST)
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- Chayahara Akiyoshi
- Diamond Research Group, Research Institute for Ubiquitous Energy Devices (UBIQEN), National Institute of Advanced Industrial Science and Technology (AIST)
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- Shikata Shin-ichi
- Diamond Research Group, Research Institute for Ubiquitous Energy Devices (UBIQEN), National Institute of Advanced Industrial Science and Technology (AIST)
抄録
Hot-filament chemical vapor deposition exhibits high potential for scaled-up diamond growth. However, contamination from filament materials may adversely affect diamond quality. In this study, we investigated the effects of off-axis (100) planes on impurity incorporation. Tungsten atoms at concentration levels of 1018 cm-3 were unintentionally incorporated as impurities from filament wires used; this was confirmed by secondary ion mass spectroscopy. The incorporated amount did not depend on the off-axis angle of substrate, which ranged from 0 to 5°. The incorporation mechanism is discussed on the basis of the obtained experimental results. It is suggested that tungsten atoms are incorporated preferentially at facet faces rather than at step edges.
収録刊行物
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- Transactions of the Materials Research Society of Japan
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Transactions of the Materials Research Society of Japan 40 (1), 47-50, 2015
一般社団法人 日本MRS
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詳細情報
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- CRID
- 1390282680489024640
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- NII論文ID
- 130005068870
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- ISSN
- 21881650
- 13823469
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可