Improvement of Electrical Device Performances for Graphene Directly Grown on a SiO₂Substrate by Plasma Chemical Vapor Deposition

• SUZUKI Hiroo

  Department of Electronic Engineering, Tohoku University

• KATO Toshiaki

  Department of Electronic Engineering, Tohoku University

• KANEKO Toshiro

  Department of Electronic Engineering, Tohoku University

抄録

The electrical device performances of graphene directly grown on a SiO₂ substrate have been improved through the precise adjustment of growth conditions such as growth temperature and growth time in plasma chemical vapor deposition (CVD). Only at the suitable combination of growth time and temperature, high quality and uniform graphene sheet can be directly grown on a SiO₂ substrate. Forward and reverse sweeps of source-drain current (I_ds) vs. gate bias voltage (V_gs) showed small hysteresis, possibly caused by the clean surface of the graphene device fabricated by plasma CVD, a technique that did not involve any transfer. Four-point probe measurements to evaluate the intrinsic sheet resistance of the fabricated graphene showed its value to be 170 - 200 Ω/sq, a value much lower than that of graphene directly grown on SiO₂ substrate by other techniques. This low sheet resistance possibly originated from the high quality of graphene obtained by plasma CVD. These observations suggest that graphene directly grown on SiO₂ substrate by plasma CVD should be a very promising candidate for fabrication of graphene-based high-performance electrical devices.

収録刊行物

• Plasma and Fusion Research

  Plasma and Fusion Research 9 (0), 1206079-1206079, 2014

  一般社団法人 プラズマ・核融合学会

キーワード

• graphene
• direct growth
• plasma CVD
• four-point probe measurement

詳細情報

• CRID: 1390282680229399040
• NII論文ID: 130005089497
• DOI: 10.1585/pfr.9.1206079
• ISSN: 18806821
• 本文言語コード: en
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