Reduction of Critical Dimension Difference in Litho-Etch-Litho- Etch Double Patterning Process

• Tang Hao

  IBM

• Shearer Jeffrey C.

  IBM

• Cheong Lin Lee

  IBM

• Saulnier Nicole A.

  IBM

• Sieg Stuart A.

  IBM

• Petrillo Karen

  IBM

• Metz Andrew

  Tokyo Electron-TTCA

• Arnold John C.

  IBM

抄録

The successful implementation of double patterning lithography in semiconductor manufacturing is dependent on the progress of several key items, including good control of critical dimension (CD) uniformity and overlay. Here we report a pass-to-pass post-etch CD (ECD) difference in Litho-Etch-Litho- Etch (LELE) process. The CD difference mainly came from the organic planarization layer (OPL) thickness delta between 1^st pass Litho-Etch (LE) process and 2^nd pass LE process. The pass-to-pass CD difference can be reduced by adjusting the OPL thickness.

収録刊行物

• Journal of Photopolymer Science and Technology

  Journal of Photopolymer Science and Technology 28 (1), 13-16, 2015

  フォトポリマー学会

キーワード

• Double Patterning
• Litho-Etch-Litho- Etch
• Critical Dimension
• Organic Planarization Layer

詳細情報

• CRID: 1390282679302685568
• NII論文ID: 130005090249
• NII書誌ID: AA11576862
• DOI: 10.2494/photopolymer.28.13
• ISSN: 13496336
• ISSN: 09149244
• NDL書誌ID: 026578612
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I026578612
• Web Site: https://www.jstage.jst.go.jp/article/photopolymer/28/1/28_13/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可