First Order Magnetization Process in Polycrystalline Perovskite Manganite

  • Bach Giang H.
    Computing Materials Science Laboratory, Faculty of Physics, VNU University of Science
  • Nguyen Oanh K. T.
    Computing Materials Science Laboratory, Faculty of Physics, VNU University of Science
  • Nguyen Chinh V.
    Computing Materials Science Laboratory, Faculty of Physics, VNU University of Science
  • Bach Cong T.
    Computing Materials Science Laboratory, Faculty of Physics, VNU University of Science

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The Ising spin model with random competing ferromagnetic, antiferromagnetic exchange interactions in the external field is used to investigate the First Order Magnetization Process at low temperature in doped polycrystalline magnetic perovskite Pr0.5Ca0.5Mn1−xMxO3 (M = Co, Ga). Using Callen identity in the correlated effective field approximation, our calculation describes well the experimental behavior, which is explained by the reorientation of antiferromagnetic clusters and by the expansion of ferromagnetic clusters in the external field at low temperature. The origin of the number of critical fields at which the steps of magnetization occurred, the magnitude of these steps and the related jumps in the magnetic field dependent resistivity are also discussed.

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