InP基板上低温成長In<sub>x</sub>Ga<sub>1-x</sub>Asの結晶構造の成長温度およびアニール温度依存性

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  • Growth and Annealing Temperature Dependences of Crystal Structure of Low-Temperature-grown In<sub>x</sub>Ga<sub>1-x</sub>As on InP Substrate
  • InP基板上低温成長InxGa₁-xAsの結晶構造の成長温度およびアニール温度依存性
  • InP キバン ジョウ テイオン セイチョウ InxGa ₁-xAs ノ ケッショウ コウゾウ ノ セイチョウ オンド オヨビ アニール オンド イソンセイ

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Low-temperature-grown (LTG) InxGa1-xAs with thicknesses of 2.0 μm on InP substrates were grown by molecular beam epitaxy at a substrate temperature of 200-240 ℃; they were characterized by high-resolution X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and X-ray reciprocal space mapping (RSM) measurements. While XRD peaks and RBS channeling dip curves were observed for LTG In0.45Ga0.55As samples grown at 220 ℃, there were no peaks and dip curves for LTG In0.44Ga0.56As samples grown at 200 ℃ in XRD and RBS channeling measurements, respectively. These indicated deterioration of crystalline quality at a growth temperature between 200 and 220 ℃. However, the RBS suggested that the In atoms were located in interstitial sites along the [110] direction and that the ratio of the interstitial In atoms was estimated to be almost 40% of all In atoms even in the LTG In0.45Ga0.55As grown at 220 ℃. X-ray RSM revealed that the LTG In0.45Ga0.55As layer was compressively strained, although its lattice constant parallel to the substrate surface was smaller than that of the InP substrate, implying that defect structures are present in the layer. Moreover, the results of XRD measurement and RBS implied transformation of excess As into As precipitates by thermal annealing in both these LTG In0.45Ga0.55As and In0.44Ga0.56As samples.

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  • 材料

    材料 64 (9), 696-700, 2015

    公益社団法人 日本材料学会

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