Recent Progress of Negative-tone Imaging Process and Materials with EUV Exposure
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- Fujimori Toru
- EUVL Infrastructure Development Center, Inc. (EIDEC)
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- Tsuchihashi Toru
- EUVL Infrastructure Development Center, Inc. (EIDEC)
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- Itani Toshiro
- EUVL Infrastructure Development Center, Inc. (EIDEC)
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Abstract
This study describes the recent progress of negative-tone imaging with EUV exposure (EUV-NTI) compared with positive-tone development (PTD). NTI uses organic solvent-based developer to provide low swelling and smooth- dissolving behavior. Therefore, EUV-NTI is expected to offer several advantages in terms of performance, especially for improving line-width roughness (LWR), which is expected to resolve the resolution, LWR, and sensitivity (RLS) trade-off. Herein, novel chemical amplified resist materials for EUV-NTI are investigated to improve LWR and sensitivity. Results indicate that the EUV-NTI has better performance than PTD, while maintaining the LWR performance. The novel high sensitivity formulation, with ‘single digit mJ/cm2 photo speed’, resolved 22-nm half pitch using NXE3100 scanner. Furthermore, EUV-NTI processing such as the pre-applied bake (PAB) temperature, post-exposure bake (PEB) temperature, development procedure, and rinse procedure are very effective for improving the lithographic performance. In addition, the lithographic performance with NXE3100 scanner is also reported..
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 28 (4), 485-488, 2015
The Society of Photopolymer Science and Technology(SPST)
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Details 詳細情報について
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- CRID
- 1390282679302550528
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- NII Article ID
- 130005101104
- 40020519250
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- NII Book ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 026578453
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed