Rapid formation of hydroxyapatite layer on polyetheretherketone by vacuum ultraviolet irradiation and microwave heating techniques
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- SUZUKI Naoto
- Department of Materials and Life Sciences, Faculty of Science and Engineering, Sophia University
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- UMEDA Tomohiro
- Department of Materials and Life Sciences, Faculty of Science and Engineering, Sophia University
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- SUMI Takuya
- Department of Materials and Life Sciences, Faculty of Science and Engineering, Sophia University
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- HORIKOSHI Satoshi
- Department of Materials and Life Sciences, Faculty of Science and Engineering, Sophia University
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- KUWAHARA Hideki
- Department of Engineering and Applied Sciences, Faculty of Science and Engineering, Sophia University
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- TOYAMA Takeshi
- Department of Materials and Applied Chemistry, College of Science and Technology, Nihon University
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- MUSHA Yoshiro
- 2<sup>nd</sup> Department of Orthopaedic Surgery, School of Medicine, Toho University
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- ITATANI Kiyoshi
- Department of Materials and Life Sciences, Faculty of Science and Engineering, Sophia University
抄録
Rapid formation of hydroxyapatite [Ca10(PO4)6(OH)2; HAp] layer on the polyetheretherketone (PEEK) substrate was examined by the combined techniques of vacuum ultraviolet (VUV) irradiation and microwave heating. The surface properties of PEEK substrate were modified by the formation of carboxyl group due to the VUV irradiation at room temperature in air, whereas the formation of HAp layer was encouraged by the microwave heating of surface-modified PEEK substrate in the HAp-dissolved solution. The optimization of the fabrication conditions was conducted by checking (i) the distance of VUV lamp to PEEK substrate (1–12 mm) and VUV irradiation time (0–120 min) for the surface modification of PEEK substrate, and (ii) the microwave heating temperatures (100 and 140°C) for the rapid formation of HAp layer on the PEEK substrate. When the PEEK substrate was surface-modified by the VUV irradiation for 120 min with the distance of VUV lamp to PEEK substrate kept being 1 mm, and then was microwave-heated in the HAp-dissolved solution at 140°C for 10 min, the thickness of the HAp layer on the PEEK substrate attained approximately 10 µm.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 124 (1), 49-54, 2016
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205288171520
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- NII論文ID
- 130005117363
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- ISSN
- 13486535
- 18820743
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可