Transient thermal analysis of packaged SiC SBDs for high temperature operation

• Kim Taehwa

  Osaka University, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering

• Funaki Tsuyoshi

  Osaka University, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering

抄録

SiC power devices have high temperature operation capability compared to Si power devices. The thermal characteristics of packaged SiC devices are important for thermal management in high temperature range. This study investigates thermal characteristics of a packaged SiC device for high temperature operation. The transient and steady state thermal resistances of the packaged SiC SBDs are measured using JESD51-1 standard. In addition, the numerical thermal simulation of the packaged SiC SBDs using finite difference method (FDM) are carried out considering nonlinear thermal properties of package materials. In the current research, the thermal resistance of the packaged SiC SBD increases by about 10% in the temperature rise from 27°C to 250°C.

収録刊行物

• IEICE Electronics Express

  IEICE Electronics Express 13 (6), 20151047-20151047, 2016

  一般社団法人 電子情報通信学会

キーワード

• silicon carbide schottky barrier diode
• transient thermal analysis
• finite difference method
• package

詳細情報

• CRID: 1390001205213693952
• NII論文ID: 130005139721
• DOI: 10.1587/elex.13.20151047
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/13/6/13_13.20151047/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可