Subthreshold 8T SRAM sizing utilizing short-channel V_t roll-off and inverse narrow-width effect

• Chang Ik Joon

  Department of Electronic and Radio Engineering, Kyunghee University

• Yang Joon-Sung

  Department of Semiconductor Systems Engineering, SungKyunKwan University

抄録

8T SRAM have been considered for robust subthreshold SRAM design. Their subthreshold operation was successfully demonstrated through real silicon measurements. However, Monte-Carlo simulation results show that this SRAM still may not deliver sufficient reliability in subthreshold operation. In this work, we overcome this problem by properly sizing SRAM transistors. We utilize short-channel V_t roll-off and inverse narrow-width effect for the sizing. Since minimum geometry transistors are employed in the SRAM bit-cell, these effects can have profound impact on SRAM stability. Hence, the proposed approach provides an efficient way to increase the yield of the 8T subthreshold SRAMs.

収録刊行物

• IEICE Electronics Express

  IEICE Electronics Express 13 (8), 20160020-20160020, 2016

  一般社団法人 電子情報通信学会

キーワード

• subthreshold SRAM
• 8T SRAM
• SRAM sizing

詳細情報

• CRID: 1390282680189800448
• NII論文ID: 130005147717
• DOI: 10.1587/elex.13.20160020
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/13/8/13_13.20160020/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可