An Application of Laser Annealing Process in Low-Voltage Power MOSFETs

• CHEN Yi

  University of the Ryukyus

• OKADA Tatsuya

  University of the Ryukyus

• NOGUCHI Takashi

  University of the Ryukyus

抄録

An application of laser annealing process, which is used to form the P-type Base junction for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base junction with uniform impurity distribution is achieved by adopting green laser annealing of pulsed mode. Higher impurity activation for the shallow junction has been achieved by the laser annealing of melted phase than by conventional RTA (Rapid Thermal Annealing) of solid phase. The application of the laser annealing technology in the fabrication process of Low-Voltage U-MOSFET is also examined.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E99.C (5), 516-521, 2016

  一般社団法人 電子情報通信学会

キーワード

• power MOSFETs
• laser annealing
• shallow junction
• electrical characteristics

詳細情報

• CRID: 1390282679355804032
• NII論文ID: 130005148969
• DOI: 10.1587/transele.e99.c.516
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E99.C/5/E99.C_516/_pdf
• 本文言語コード: en
• データソース種別:
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