Effects of substrate surface composition and deposition temperature on deposition of flat and continuous Ru thin films

DOI Web Site 参考文献15件
  • CHIBA Hirokazu
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology TOSOH Corporation
  • HIRANO Masaki
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • KAWANO Kazuhisa
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology TOSOH Corporation
  • OSHIMA Noriaki
    TOSOH Corporation
  • FUNAKUBO Hiroshi
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology

抄録

Ru thin films were deposited by pulsed metal organic chemical vapor deposition on SiO2 (native oxide)/(001)Si, HfSiON/SiON/(001)Si, and HfO2/SiON/(001)Si substrates at 200, 210, and 230°C from bis(2,4-dimethylpentadienyl)ruthenium [Ru(DMPD)2]–O2 system. Incubation time before starting the film deposition strongly depended on the deposition temperature. Atomic force microscopy (AFM) revealed that average surface roughness, Ra, of the Ru films deposited on HfO2/SiON/(001)Si substrates strongly depended on the deposition temperature even though those films deposited on SiO2 (native oxide)/(001)Si substrates and HfSiON/SiON/(001)Si substrates showed small dependency on deposition temperature. In addition, it was obvious that the grain size of Ru films deposited on HfO2/SiON/(001)Si substrate was larger than those deposited on SiO2 (native oxide)/(001)Si substrates. Minimum film thickness to obtain continuous Ru film was almost independent on the kinds of substrates and deposition temperature range from 200 to 230°C. These results clearly show the effect of kinds of substrates and deposition temperature on flat and continuous Ru film deposition.

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