In-situ Monitoring of TMAH Developer Intrusion into Resist Film by C-V Method

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  • Shirataki Hodaka
    Department of Electrical Engineering, Nagaoka University of Technology
  • Kawai Akira
    Department of Electrical Engineering, Nagaoka University of Technology

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The TMAH developer (2.38 wt% aqueous solution) intrusion into a resist film is analyzed by the typical current-voltage (C-V) method. As well known device structure, Metal / Insulator / Semiconductor (MIS) structure is employed, and a resist film (novolak resin base) is adopted to an insulator material. During the TMAH developer dropping on the Au mesh electrode, an increase of the capacitance and a parallel shift towards a negative gate bias voltage region in a C-V curve can be clearly observed. At the first stage of dropping, these signal changes in C-V curve are relatively large. Refractive index of the resist film slightly increases after the TMAH developer dropping, which reflects the condensation of polymer resin due to the TMAH developer intrusion. A contact angle decrease of the TMAH developer after dropping is also monitored. A spreading coefficient cS of TMAH developer decreases gradually as the time elapse. Particularly, the capacitance change clearly indicates the intrusion of the TMAH developer as the function of a time elapses. These dynamic measurements of the intrusion will be effective to analyze the liquid intrusion mechanisms into polymer materials.

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