Assumption of Heat Generation in CFD Analysis for Accurate Tempearture Distribution of Power Si MOSFET

DOI Web Site 参考文献7件
  • Kibushi Risako
    Dept. of Mechanical Engineering, Tokyo University of Science, Yamaguchi
  • Hatakeyama Tomoyuki
    Dept. of Mechanical Systems Engineering, Toyama Prefectural University
  • Yuki Kazuhisa
    Dept. of Mechanical Engineering, Tokyo University of Science, Yamaguchi
  • Nakagawa Shinji
    Dept. of Mechanical Systems Engineering, Toyama Prefectural University
  • Ishizuka Masaru
    Dept. of Mechanical Systems Engineering, Toyama Prefectural University

抄録

This paper describes the prediction method of the bottom temperature of power Si MOSFET by using CFD (Computational Fluid Dynamics) analysis. For accurate thermal design of electronics, nano-micro scale hot spot temperature in semiconductor devices should be considered. Electro-Thermal Analysis is attractive method to calculate accurate temperature distribution of semiconductor devices. In our previous results, we proposed simple estimation method of nano-micro scale hot spot temperature from the results of Electro-Thermal Analysis. In the method, accurate estimation of temperature at the bottom side of the device is required. In this study, power Si MOSFET is focused as a semiconductor device, which is widely used in power electronics area. Then, in this paper, appropriate CFD modeling for detecting the bottom temperature of power Si MOSFET is discussed. To verify the appropriate CFD modeling, the analysis results are compared with the experimental results, and the suitable assumption of heat generation in CFD analysis is discussed. From the results, it is investigated that not only heat generation from silicone die but also other factor should be considered in the CFD modeling to detect accurate temperature of power Si MOSFET.

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