シリコンウェハ変形による加工変質層残留応力の評価

DOI Web Site

書誌事項

タイトル別名
  • Evaluation of Subsurface Damage in Silicon Wafer Based on Deflection Analysis
  • —有限要素法を用いた数値シミュレーションによる薄いウェハの変形メカニズム解明—
  • —Thin Wafer Deformation Mechanism Revealed by Use of FEM—

抄録

Diamond grinding is often used for silicon wafer thinning. This process brings about not only efficient material removal of wafer, but also the subsurface damage which is accompanied by residual stress on the wafer surface. The residual stress greatly contributes to the distortion of thin wafer. Reported in this paper are deflection behavior of wafer when it is subjected to the residual stress and a practical method of the residual stress estimation based on the wafer deflection. Based on the numerical FEM analysis results, the thin wafer is found to undergo three stages of deformation, dependent on the quantity of residual stress. When the residual stress is sufficiently small, the wafer is deflected into a sphere shape which is able to be described by the Stoney's Equation with its corrective coefficient. With an increase in the residual stress, the wafer deflection starts to depart from the sphere shape, but still maintains in axisymmetric form until the deflection reach to 1 ~ 2 times larger than the wafer thickness. Beyond this critical point, the shape of deflected wafer is transformed into a cylindrical warping. The amount of wafer deflection is then associated to the residual stress to provide an easy way of estimation for residual stress on wafer with different thickness.

収録刊行物

  • 精密工学会誌

    精密工学会誌 83 (5), 426-432, 2017

    公益社団法人 精密工学会

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ