書誌事項
- タイトル別名
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- Recent Developments of Numerical Calculation in Crystal Growth of SiC
- SiC ケッショウ セイチョウ ニ オケル スウチ カイセキ ノ サイキン ノ ハッテン
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The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H- and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H- and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C- and Si-faces of 6H-SiC were used as seed crystals. 6H-SiC was preferred to grow rather than 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.<br>
収録刊行物
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- Journal of the Vacuum Society of Japan
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Journal of the Vacuum Society of Japan 60 (8), 313-320, 2017
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282680271525760
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- NII論文ID
- 130005995516
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- NII書誌ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 028468061
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可