Reconfigurable U-shaped tunnel field-effect transistor

DOI Web Site 2 Citations 23 References
  • Lee Won Joo
    Department of Nanoenergy Engineering, BK21 Plus Nanoconvergence Technology Division, Pusan National University
  • kwon Hee Tae
    Department of Nanoenergy Engineering, BK21 Plus Nanoconvergence Technology Division, Pusan National University
  • Choi Hyun-Suk
    Department of Nanoenergy Engineering, BK21 Plus Nanoconvergence Technology Division, Pusan National University
  • Wee Deahoon
    Department of Nanoenergy Engineering, BK21 Plus Nanoconvergence Technology Division, Pusan National University
  • Kim Sangwan
    Department of Electrical and Computer Engineering, Ajou University
  • Kim Yoon
    Department of Nanoenergy Engineering, BK21 Plus Nanoconvergence Technology Division, Pusan National University

Abstract

<p>A reconfigurable U-shaped tunnel field-effect transistor (RUTFET) is proposed as a low-power dynamically programmable logic device. It has several advantages over conventional reconfigurable TFETs: 1) Excellent scalability without any degradation of subthreshold swing (SS) and drain-induced barrier thinning (DIBT) with recessed channel structure. 2) High current drivability with increased band-to-band tunneling junction 3) Scaling of SS with tunneling barrier width defined by geometrical parameters. In this manuscript, its electrical characteristics are examined by technology computer-aided design (TCAD) simulation. It shows ∼30× higher ON-state current than control devices and 41.8 mV/dec-SS during drain current increase by five orders magnitude. The reconfigurable operations for n- and p-type FETs are also discussed.</p>

Journal

  • IEICE Electronics Express

    IEICE Electronics Express 14 (20), 20170758-20170758, 2017

    The Institute of Electronics, Information and Communication Engineers

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