水素-アルゴン混合スパッタリング法により作製したBi₂Te₃薄膜の構造評価

• TAKANO Kousuke

  Department of Materials Science, Tokai University

• HAMADA Jun

  Department of Materials Science, Tokai University

• TAKASHIRI Masayuki

  Department of Materials Science, Tokai University

書誌事項

タイトル別名

• Structural Evaluation of Bi₂Te₃ Thin Films Prepared by Hydrogen-Argon Mixing Sputtering

抄録

We prepared bismuth telluride (Bi₂Te₃) thin film using radio-frequency magnetron sputtering with different H₂-Ar gas mixing ratios, and investigated the structural properties of the Bi₂Te₃ thin films. The deposition rate of the thin films decreased as the mixing ratio was increased because tellurium atoms were lost from the films via the chemical reaction between the tellurium and hydrogen atoms. This phenomenon was supported with the results of the other analyses such as scanning electron microscopy (SEM), electron probe microanalyzer (EPMA), and X-ray diffraction method (XRD). The highest crystallinity was obtained at the H₂-Ar gas mixing ratio of 5%. When the H₂ gas was introduced, the oxygen concentration near film surface decreased. Therefore, we conclude that the crystallinity and dense structure of Bi₂Te₃ thin films improved by introducing an optimal amount of hydrogen gas in the sputtering deposition. It can be expected that the electrical conductivity of the thin films improves owing to the enhancement of electron transport.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　Ａｄｖａｎｃｅｄ　Ｓｃｉｅｎｃｅ

  Ｊｏｕｒｎａｌ　ｏｆ　Ａｄｖａｎｃｅｄ　Ｓｃｉｅｎｃｅ 30 (0), n/a-, 2018

  Society of Advanced Science

キーワード

• Hydrogen-argon mixing
• RF magnetron sputtering
• Bi₂Te₃ thin films

詳細情報

• CRID: 1390845712996179072
• NII論文ID: 130007481508
• DOI: 10.2978/jsas.30105
• ISSN: 18813917
• ISSN: 09155651
• Web Site: https://www.jstage.jst.go.jp/article/jsas/30/0/30_30105/_pdf
• 本文言語コード: ja
• データソース種別:
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