ESR and EDMR study on nitrided 4H-SiC MOS structures

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  • UMEDA Takahide
    Division of Applied Physics, Faculty of Pure and Applied Science, Technology, University of Tsukuba

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Other Title
  • ESR/EDMRによる窒化したSiC-MOS界面の構造評価
  • ESR/EDMR ニ ヨル チッカ シタ SiC-MOS カイメン ノ コウゾウ ヒョウカ

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Abstract

<p>A nitrided 4H-SiC/SiO2 structure is the key component for high-performance 4H-SiC MOSFETs. We investigated this interface system using ESR/EDMR (electrically-detected ESR) spectroscopy. One of the most important results is the discovery of the “nitrogen doping effect.” For a standard nitridation condition (gate-oxide thickness = 50 nm and post oxidation anneal by NO at 1250°C for 60 min.), the doping concentration was found to be 2×1011 cm-2 or 7×1017 cm-3. The nitrogen doping effect can explain various properties of the nitrided SiC-MOS interfaces. However, there are still unclear issues, such as the microscopic origin(s) of major interface states after the nitridation. EDMR studies revealed both shallow and deep interface states related to carbon atoms. These centers were removed by the nitridation.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 85 (7), 580-584, 2016-07-10

    The Japan Society of Applied Physics

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