Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

    • Lin Da-Wei Lin Da-Wei
    • Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Li Zhen-Yu
    • Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Chang Wei-Ting
    • Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Hsu Hung-Wen
    • Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Kuo Hao-Chung
    • Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Lu Tien-Chang
    • Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Wang Shing-Chung
    • Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Liao Wei-Tsai
    • Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
    • Honda Yoshio
    • Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
    • Sawaki Nobuhiko
    • Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

Abstract

We present a study of semi-polar $(1\bar{1}01)$ InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

Journal

Applied Physics Express  

Applied Physics Express 4(1), 012105-012105-3, 2011-01-25 

The Japan Society of Applied Physics

References:  12

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Codes

  • NII Article ID (NAID) :
    150000001072
  • NII NACSIS-CAT ID (NCID) :
    AA12295133
  • Text Lang :
    EN
  • Article Type :
    SHO
  • ISSN :
    18820778
  • NDL Article ID :
    10947910
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z78-A526
  • DOI :
    10.1143/APEX.4.012105
  • Databases :
    CJP  NDL  JSAP/JPS 

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