Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment

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著者

    • Oshiyama Itaru Oshiyama Itaru
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Tai Kaori Tai Kaori
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Yamaguchi Shinpei
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Tanaka Kazuaki
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Hagimoto Yoshiya
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Uemura Takayuki
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Ando Takashi
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Watanabe Koji
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Yamamoto Ryo
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Kanda Saori
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Wang Junli
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Tateshita Yasushi
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Wakabayashi Hitoshi
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Tagawa Yukio
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Tsukamoto Masanori
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Iwamoto Hayato
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Saito Masaki
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Oshima Masaharu
    • Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
    • Toyoda Satoshi
    • Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
    • Nagashima Naoki
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    • Kadomura Shingo
    • Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

抄録

In this paper, we demonstrate a wet treatment for the HfSix/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state $T_{\text{inv}}$ value and reduce the gate leakage $J_{\text{g}}$. As a result, we succeeded in scaling down $T_{\text{inv}}$ to 1.41 nm without mobility or $J_{\text{g}}$ degradation by ozone–water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone–water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.

収録刊行物

  • Jpn J Appl Phys

    Jpn J Appl Phys 47(4), 2379-2382, 2008-04-25

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

各種コード

  • NII論文ID(NAID)
    150000050262
  • 本文言語コード
    EN
  • 資料種別
    特集
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    9476338
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    NDL  JSAP 
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