Electronic Structure of Sr-Doped LaScO3 Single Crystal Annealed under Different Atmospheres

    • Nagao Yuki Nagao Yuki
    • Department of Mechanical Systems and Design, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
    • Liu Jin Liu Jin
    • Department of Mechanical Systems and Design, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
    • Higuchi Tohru
    • Department of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
    • Sata Noriko
    • Department of Mechanical Systems and Design, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
    • Yugami Hiroo
    • Department of Mechanical Systems and Design, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

Abstract

The electronic structure near the top of the valence band and the bottom of the conduction band for Sr-doped LaScO3 single crystal was investigated by X-ray absorption spectroscopy (XAS). The conduction band consists mainly of the Sc 3d state hybridized with the O 2p state. A defect-induced localized level is observed below the Sc 3d state of the Sr-doped single crystal. The XAS spectrum of a wet-annealed crystal shows a broad absorption around the top of the valence band that may be related to the level of holes based on the related charge carrier map of Sr-doped LaScO3.

Journal

Jpn J Appl Phys  

Jpn J Appl Phys 49(1), 010208-010208-3, 2010-01-25 

The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID) :
    150000053135
  • NII NACSIS-CAT ID (NCID) :
    AA12295836
  • Text Lang :
    EN
  • Journal Type :
    大学紀要
  • ISSN :
    0021-4922
  • NDL Article ID :
    10522872
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z53-A375
  • Databases :
    NDL  JSAP/JPS 

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