Efficiency Improvement of Silicon Solar Cells by Nitric Acid Oxidization

Abstract

In this study, we investigate the effect of nitric acid oxidation on p-type silicon solar cells. The oxide layer on the surface of a p-type silicon substrate was grown under various growth times and temperatures while under nitric acid treatment. After 30 min of growth at 23 °C, an efficiency improvement of absolute 2% was obtained using our laboratory fabrication process.

Journal

Jpn J Appl Phys  

Jpn J Appl Phys 49(2), 022301-022301-4, 2010-02-25 

The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID) :
    150000053471
  • NII NACSIS-CAT ID (NCID) :
    AA12295836
  • Text Lang :
    EN
  • Journal Type :
    大学紀要
  • ISSN :
    0021-4922
  • NDL Article ID :
    10572305
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z53-A375
  • Databases :
    NDL  JSAP/JPS 

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