抄録
In this study, we investigate the effect of nitric acid oxidation on p-type silicon solar cells. The oxide layer on the surface of a p-type silicon substrate was grown under various growth times and temperatures while under nitric acid treatment. After 30 min of growth at 23 °C, an efficiency improvement of absolute 2% was obtained using our laboratory fabrication process.
収録刊行物
- Jpn J Appl Phys
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Jpn J Appl Phys 49(2), 022301-022301-4, 2010-02-25
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics