Effects of Nanoscaled Tin-Doped Indium Oxide on the Image Sticking Property of Liquid Crystal Cells

Unusual residual time of image sticking under high-voltage electrostatic discharge (ESD) stress on liquid crystal (LC) cells has been observed. It was found that nanoscaled conductive particles doped in LC cells can significantly reduce the residual time of image sticking and the breakdown voltage of the LC cells. This finding can help to protect the doped cells from the attacks of ESD and thus to improve their displaying performance and reliability. In this study, nanoscaled tin-doped indium oxide (ITO) powders were uniformly mixed with high-resistance LC to form a suspension solution. In order to investigate other effects of ITO particles on the LC at high and low voltages, optical and electrical characteristics were compared for the doped cells and those samples without intentional doping. According to the measurement results, it is interesting to find that, except the breakdown characteristic, no other properties in the doped samples were changed with respect to the displaying functions under normal operational voltage.