Improved Performance of In

    • Molle Alessandro
    • Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
    • Lamagna Luca
    • Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
    • Wiemer Claudia
    • Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
    • Spiga Sabina
    • Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy
    • Fanciulli Marco
    • Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy

Abstract

Atomic layer deposition of Al:ZrO<sub>2</sub>films on In<sub>0.53</sub>Ga<sub>0.47</sub>As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al<sub>2</sub>O<sub>3</sub>gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In<sub>0.53</sub>Ga<sub>0.47</sub>As surface. We demonstrates that increasing the number of initial Al<sub>2</sub>O<sub>3</sub>cycles in the growth sequence can improve the physical quality and the electrical response of the Al:ZrO<sub>2</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As interface while preserving the overall composition of the oxide.

Journal

Applied Physics Express  

Applied Physics Express 4(9), 094103-094103-3, 2011-09-25 

The Japan Society of Applied Physics

References:  19

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Codes

  • NII Article ID (NAID) :
    150000057487
  • NII NACSIS-CAT ID (NCID) :
    AA12295133
  • Text Lang :
    EN
  • Article Type :
    SHO
  • ISSN :
    18820778
  • NDL Article ID :
    11250576
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z78-A526
  • DOI :
    10.1143/APEX.4.094103
  • Databases :
    CJP  NDL  JSAP/JPS 

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