ＧＭＲ人工格子メモリーの記憶メカニズム

• 王 智剛

  東北大学電気通信研究所

• 中村 慶久

  東北大学電気通信研究所

書誌事項

タイトル別名

• Storage Mechanism for GMR Superlattice Memory.

抄録

We found that in weakly coupled giant magnetoresistance (GMR) superlattices, the small-field response's slope is dependent on its past magnetic history. On the basis of this storage mechanism, we designed and developed a one-bit binary solid-state memory element. We also succeeded in fabricating a one-bit quaternary memory based on the fact that there are four stable states under a zero field in weakly coupled superlattices. Finally, we studied the possibility of what is called "spin-tunneling GMR memory." An experiment showed that a similar storage mechanism exists in tunneling junctions, and analysis confirmed a large SNR in this configuration.

収録刊行物

• 日本応用磁気学会誌

  日本応用磁気学会誌 20 (2), 369-372, 1996

  公益社団法人 日本磁気学会

キーワード

• storage
• weakly coupled GMR effect
• binary memory
• quaternary memory
• spin-tunneling memory

詳細情報

• CRID: 1390001205093287552
• NII論文ID: 20000346230
• NII書誌ID: AN0031390X
• DOI: 10.3379/jmsjmag.20.369
• COI: 1:CAS:528:DyaK28XivFCgsr4%3D
• ISSN: 18804004
• ISSN: 02850192
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可