Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer’s acceptor density

• Shinya Akiyama

• Masahiro Kondo

• Leona Wada

• Kazushige Horio

抄録

We perform a numerical analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped buffer layer with only a deep acceptor as a deep level and study how its density N DA and the length of field-plate L FP affect the breakdown voltage V br . The calculated characteristics usually show abrupt increases in gate and drain currents due to impact ionization, resulting in breakdown. But, in some cases, V br is limited by current flow through the buffer, and this current is higher for lower N DA . Therefore, V br becomes higher for higher N DA . V br takes a maximum value at some L FP , and the highest average electric field between gate and drain becomes about 3.2 MV cm −1 when the breakdown occurs.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (6), 068003-, 2019-05-22

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360003449882770560
• NII論文ID: 210000155899
• DOI: 10.7567/1347-4065/ab1e8f
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab1e8f
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab1e8f/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab1e8f/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab1e8f
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