Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation

• N. Kobayashi

• D.H. Zhu

• M. Hasegawa

• H. Katsumata

• Y. Tanaka

• N. Hayashi

• Y. Makita

• H. Shibata

• S. Uekusa

収録刊行物

• Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 127-128 350-354, 1997-05

  Elsevier BV

キーワード

• Instrumentation
• Nuclear and High Energy Physics

詳細情報

• CRID: 1360299769471199616
• NII論文ID: 30003307038
• NII書誌ID: AA0075993X
• DOI: 10.1016/s0168-583x(96)00955-x
• ISSN: 0168583X
• Web Site: https://api.elsevier.com/content/article/PII:S0168583X9600955X?httpAccept=text/xml
• Web Site: https://api.elsevier.com/content/article/PII:S0168583X9600955X?httpAccept=text/plain
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