Transmission electron microscopy observation of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substrates

• M. Tanaka

• N. Tomita

• T. Higuchi

• S. Shimomura

• A. Adachi

• N. Sano

• S. Hiyamizu

収録刊行物

• Journal of Crystal Growth

  Journal of Crystal Growth 150 388-393, 1995-05

  Elsevier BV

キーワード

• Materials Chemistry
• Inorganic Chemistry
• Condensed Matter Physics

詳細情報

• CRID: 1360299769918503552
• NII論文ID: 30004635506
• DOI: 10.1016/0022-0248(95)80240-d
• ISSN: 00220248
• Web Site: https://api.elsevier.com/content/article/PII:002202489580240D?httpAccept=text/xml
• Web Site: https://api.elsevier.com/content/article/PII:002202489580240D?httpAccept=text/plain
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