Plasma Wave Electronics

DOI Web Site 11 Citations
  • Michael S. Shur
    Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA
  • Victor Ryzhii
    Computer Solid State Physics Lab, University of Aizu, Aizu-Wakamatsu 965-8580, Japan

Abstract

<jats:p> Plasma waves are oscillations of electron density in time and space. In deep submicron field effect transistors plasma wave frequencies lie in the terahertz range and can be tuned by applied gate bias. Since the plasma wave frequency is much larger that the inverse electron transit time in the device, it is easier to reach "ballistic" regimes for plasma waves than for electrons moving with drift velocities. In the ballistic regime, no collisions of electrons with impurities or lattice vibrations occur on a time scale on the order of the plasma oscillation period, and the device channel acts as a resonant cavity for the plasma waves, making possible tunable resonant detection or even emission of the electromagnetic radiation in the terahertz range. We review the theory of plasma waves in field effect transistors; discuss instabilities of these waves in different device structures and their applications for detection and generation of the terahertz radiation. </jats:p>

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