High-pressure Raman study of solid deuterium sulfide up to 17 GPa

  • H. Shimizu
    Department of Electronics and Computer Engineering, Gifu University, 1-1 Yanagido, Gifu 501-11, Japan
  • H. Murashima
    Department of Electronics and Computer Engineering, Gifu University, 1-1 Yanagido, Gifu 501-11, Japan
  • S. Sasaki
    Department of Electronics and Computer Engineering, Gifu University, 1-1 Yanagido, Gifu 501-11, Japan

抄録

<jats:p>High-pressure Raman studies up to 17 GPa have been made on solid D2S at room temperature. Features of vibron and phonon modes indicate a pressure-induced phase transition near 10 GPa. In the orientationally disordered phase I between 0.5 and 10 GPa, the symmetric stretching mode ν1 shows a red-shift in frequency (dν1/dP=−6.0 cm−1/GPa). By comparing with recent studies of solid H2S, the deuterium isotope effects are investigated for vibrational properties and phase transitions of D2S under ultrahigh pressures.</jats:p>

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