Attachment of slow electrons to hexafluorobenzene

DOI PDF 被引用文献6件
  • K. S. Gant
    Health Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
  • L. G. Christophorou
    Health Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

抄録

<jats:p>Slow (≲ 3 eV) electrons attach to hexafluorobenzene (C6F6) nondissociatively with large cross sections via two distinct processes, one at ∼0.0 eV and another peaking at 0.73 eV. The absolute rates and cross sections have been determined as a function of electron energy for both processes and are reported. At 0.03 and 0.73 eV the cross sections are 1.23×10−14 and 8.04×10−16 cm2, respectively; the thermal (T=297°K) value of the attachment rate is 3.3×109 sec−1 torr−1(=1.02×10−7 sec−1 molecule−1 cm3). The lifetime τ of C6F6−* at ∼0.0 eV is ∼12 μsec, but at 0.73 eV it is much shorter, 10−8≲τ&lt;10−6 sec. The ∼0.0 eV process is associated with electron capture into the degenerate π4 and π5 molecular orbitals and is ascribed to the configurations π21π22π23π14 and π21π22π23π15, while the 0.73 eV process is associated with electron capture into the π6 orbital and is ascribed to the configuration π21π22π23π16. For both C6H6 and C6F6 a relationship is shown to exist between the ionization energies of the occupied π1 and π2, π3 orbitals and the position of the negative ion (shape) resonances associated with the unoccupied π4, π5, and π6 orbitals. The observed large attachment rates for C6F6 extending from thermal energies to ≳3 eV recommend it as a potential ’’additive’’ in high-voltage multicomponent gaseous insulators.</jats:p>

収録刊行物

被引用文献 (6)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ