Preparation of Semiconducting Cubic Boron Nitride

• R. H. Wentorf

  General Electric Research Laboratory, Schenectady, New York

Abstract

Semiconducting crystals of cubic BN may be prepared at high pressures and temperatures by adding small amounts of selected impurities to the synthesis mixture (hexagonal boron nitride plus lithium or magnesium nitride). P-type crystals, blue in color, can be prepared by adding Be; they may have resistivities of about 103 ohm-cm and activation energies for conduction of about 0.2 ev. N-type crystals can be prepared by adding S, Si, KCN, and other impurities; they were found to have resistivities of 103 ohm-cm or higher and activation energies for conduction of 0.05 to 0.20 v. The diffusion of impurities into cubic BN crystals was not found to proceed as rapidly as with diamond. Point-contact rectification effects have been observed among semiconducting cubic BN and diamond crystals.

Journal

• The Journal of Chemical Physics

  The Journal of Chemical Physics 36 (8), 1990-1991, 1962-04-15

  AIP Publishing

Keywords

• Physical and Theoretical Chemistry
• General Physics and Astronomy

Details

• CRID: 1361699994116502400
• NII Article ID: 30015716644
• DOI: 10.1063/1.1732816
• ISSN: 10897690
• ISSN: 00219606
• ISSN: http://id.crossref.org/issn/00219606
• Web Site: https://pubs.aip.org/aip/jcp/article-pdf/36/8/1990/18824914/1990_1_online.pdf
• Data Source:
  • Crossref
  • CiNii Articles