Giant Hall effect in percolating ferromagnetic granular metal-insulator films

• A. B. Pakhomov

  Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

• X. Yan

  Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

• B. Zhao

  Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

抄録

We studied both the resistivity and the Hall resistivity of cosputtered granular Ni–SiO2 films with the metal volume fraction x in the range of 0.5–1.0. Near the metal-insulator transition, or x of about 0.53–0.61, the saturated value of the Hall resistivity was up to 2×10−4 Ω cm. This value is almost 4 orders of magnitude greater than that of pure nickel. Both the resistivity and the Hall resistivity varied weakly with temperature, throughout the range of 5–300 K. We suggest that the percolating ferromagnetic granular metal films can be an alternative candidate material for high sensitivity Hall sensors.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 67 (23), 3497-3499, 1995-12-04

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1363670319303246592
• NII論文ID: 30015751972
• DOI: 10.1063/1.115259
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/67/23/3497/18515701/3497_1_online.pdf
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