High critical currents in strained epitaxial YBa2Cu3O7−δ on Si

DOI PDF 被引用文献7件
  • D. K. Fork
    Xerox Palo Alto Research Center, Palo Alto, California 94304 and Department of Applied Physics, Stanford University, Stanford, California 94305
  • D. B. Fenner
    Xerox Palo Alto Research Center, Palo Alto, California 94304 and Physics Department, Santa Clara University, Santa Clara, California 95053
  • R. W. Barton
    Conductus, Inc., Sunnyvale, California 94086
  • Julia M. Phillips
    AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • G. A. N. Connell
    Xerox Palo Alto Research Center, Palo Alto, California 94304
  • J. B. Boyce
    Xerox Palo Alto Research Center, Palo Alto, California 94304
  • T. H. Geballe
    Department of Applied Physics, Stanford University, Stanford, California 94305

この論文をさがす

抄録

<jats:p>Epitaxial YBa2Cu3O7−δ (YBCO) films were grown on Si (100) using an intermediate buffer layer of yttria-stabilized zirconia. Both layers are grown via an entirely in situ process by pulsed laser deposition. All films consist of c-axis oriented grains as measured by x-ray diffraction. Strain results from the large difference in thermal expansion coefficients between Si and YBCO. Thin (&lt;500 Å) YBCO films are unrelaxed and under tensile strain with a distorted unit cell. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12%. The normal-state resistivity is 280 μΩ cm at 300 K; the critical temperature Tc (R=0) is 86–88 K with a transition width (ΔTc) of 1 K. Critical current densities of 2×107 A/cm2 at 4.2 K and 2.2×106 A/cm2 at 77 K have been achieved.</jats:p>

収録刊行物

被引用文献 (7)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ