Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass

• Ryoichi Tohmon

  Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

• Yasushi Shimogaichi

  Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

• Shuji Munekuni

  Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

• Yoshimichi Ohki

  Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

• Yoshimasa Hama

  Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

• Kaya Nagasawa

  Sagami Institute of Technology, 1-1-25 Tsujido-Nishikaigan, Fujisawa, Kanagawa 251, Japan

抄録

Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 54 (17), 1650-1652, 1989-04-24

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1362544421016213632
• NII論文ID: 30015761123
• DOI: 10.1063/1.101396
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/54/17/1650/18470672/1650_1_online.pdf
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