Ultraviolet radiation induced defect creation in buried SiO2 layers

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  • R. A. B. Devine
    Centre National d’Etudes des Télécommunications, BP 98, 38243 Meylan, France
  • J-L. Leray
    CEA-DAM, Centre de Bruyères le Châtel, BP 12, 91680 Bruyères le Châtel, France
  • J. Margail
    CEA-LETI, BP 85X, 38019 Grenoble Cedex, France

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<jats:p>The creation of oxygen-vacancy defects in amorphous SiO2 films produced by O+ implantation and annealing has been studied using radiation from a microwave excited Kr plasma. Photons having λ≤125 nm are found to create saturation densities ∼1.3×1019 cm−3 whereas for λ≥ (R18)200 nm the saturation density is ∼3.4×1017 cm−3. It is argued that simultaneous defect creation and annihilation may occur for long wavelength, sub-band-gap energy photons. Strongly enhanced defect creation (≤970 times) is observed as compared to bulk, amorphous SiO2 in the form of Suprasil 1 plate. It is suggested that this may be due to H sensitization of the defect precursors (O3≡Si—Si≡O3).</jats:p>

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