Microcrystal growth of GaAs on a Se-terminated GaAlAs surface for the quantum-well box structure by sequential supplies of Ga and As molecular beams

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  • Toyohiro Chikyow
    National Research Institute for Metals, Tsukuba Laboratories, 1-2-1 Sengen Tsukuba-shi, Ibaraki 305, Japan
  • Nobuyuki Koguchi
    National Research Institute for Metals, Tsukuba Laboratories, 1-2-1 Sengen Tsukuba-shi, Ibaraki 305, Japan

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<jats:p>A growth of GaAs microcrystals on a Se-terminated GaAlAs surface was demonstrated for the first time for the quantum-well box fabrication. At first, Ga molecules were supplied to the Se-terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and a bared Se-terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs microcrystals were observed to grow epitaxially on the surface. As for GaAs growth on an As stabilized GaAlAs surface, which was also carried out with sequential supplies of Ga and As molecules, lateral growth of GaAs was observed. From the obtained results, this newly proposed method is expected to be useful in fabricating GaAs microcrystals for the quantum-well box structure.</jats:p>

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