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- A. J. Kontkiewicz
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- A. M. Kontkiewicz
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- J. Siejka
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- S. Sen
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- G. Nowak
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- A. M. Hoff
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- P. Sakthivel
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- K. Ahmed
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- P. Mukherjee
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- S. Witanachchi
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
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- J. Lagowski
- Center for Microelectronics Research and Physics Department, University of South Florida, Tampa, Florida 33620
抄録
<jats:p>We have analyzed red and blue luminescence from porous silicon as a function of oxidation parameters and feature dimension determined with an atomic force microscope. We have found correlation between blue luminescence intensity and the increase in feature size caused by oxidation. We have further shown that blue luminescence, is identical, with respect to spectrum and fast decay, to that of high microelectronic quality SiO2 grown on crystalline silicon using dry oxygen plus an organic chlorine compound. Thus, we conclude that blue luminescence originates from SiO2 film rather than from the silicon nanocrystals in the porous material. Intensity enhancement, as compared to SiO2 on crystalline wafers, comes from the gigantic surface area of porous silicon.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 65 (11), 1436-1438, 1994-09-12
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360298340999195392
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- NII論文ID
- 30015781566
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- DOI
- 10.1063/1.112973
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- ISSN
- 10773118
- 00036951
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- データソース種別
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- Crossref
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