Chemical vapor deposition of silicon using a CO2 laser

• C. P. Christensen

  Electrical Engineering Department, University of Southern California, University Park, Los Angeles, California 90007

• K. M. Lakin

  Electrical Engineering Department, University of Southern California, University Park, Los Angeles, California 90007

抄録

Chemical vapor deposition of polycrystalline silicon is reported in which a CO2 laser is used for substrate heating. With this technique, deposition can be spatially limited to only a small portion of the substrate, and a spatial resolution of 50 μ is demonstrated. Since the reaction chamber and majority of the substrate are at much lower temperatures, premature gas phase reactions and substrate etching are avoided.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 32 (4), 254-256, 1978-02-15

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1360016869736257152
• NII論文ID: 30015792354
• DOI: 10.1063/1.90010
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/32/4/254/18436264/254_1_online.pdf
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