Electrical switching and memory phenomena in Cu-TCNQ thin films

• R. S. Potember

  Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20810

• T. O. Poehler

  Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20810

• D. O. Cowan

  Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218

抄録

Stable and reproducible current-controlled bistable electrical switching has been observed in polycrystalline organic semiconducting films. The effect has been observed in a lamellar structure with a film of microcrystalline Cu-TCNQ between Cu and Al electrodes where the Cu-TCNQ is grown on a Cu substrate via a spontaneous electrolysis technique. The switching effect is insensitive to moisture and is observed over a large temperature range. The current-voltage characteristics reveal an abrupt decrease in impedance from 2 MΩ to less than 200 Ω at a field strength of 4×103 V/cm. The transition from a high- to low-impedance state occurs with delay and switching times of approximately 15 and 10 nsec, respectively. Switching with high-power dissipation yields a low-impedance memory state which can be erased by application of a short current pulse. An interpretation of this behavior is based on the bulk properties of the mixed valence semiconductor Cu-TCNQ.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 34 (6), 405-407, 1979-03-15

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1363670319899116800
• NII論文ID: 30015793160
• DOI: 10.1063/1.90814
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/34/6/405/18438715/405_1_online.pdf
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